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A comprehensive study of MOVPE growth on 200 mm GaN-on-SOI for monolithic integrated GaN ICs

dc.contributor.authorZhao, Ming
dc.contributor.authorGeens, Karen
dc.contributor.authorLi, Xiangdong
dc.contributor.authorAmirifar, Nooshin
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-31T13:04:27Z
dc.date.available2021-10-31T13:04:27Z
dc.date.issued2021
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37414
dc.sourceIIOimport
dc.titleA comprehensive study of MOVPE growth on 200 mm GaN-on-SOI for monolithic integrated GaN ICs
dc.typeMeeting abstract
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorAmirifar, Nooshin
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.conference2021 Virtual MRS Spring Meeting
dc.source.conferencedate17/04/2021
dc.source.conferencelocationvirtual conference virtual conference
imec.availabilityPublished - imec


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