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Single wafer CVD of silicon nitride for CMOS gate applications

dc.contributor.authorPomarede, C.
dc.contributor.authorWerkhoven, Chris
dc.contributor.authorWeidmann, J.
dc.contributor.authorBergman, T.
dc.contributor.authorGschwandtner, A.
dc.contributor.authorHoussa, Michel
dc.date.accessioned2021-10-14T11:34:31Z
dc.date.available2021-10-14T11:34:31Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3759
dc.sourceIIOimport
dc.titleSingle wafer CVD of silicon nitride for CMOS gate applications
dc.typeProceedings paper
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage147
dc.source.endpage154
dc.source.conferenceUltrathin SiO2 High-K Materials for ULSI Gate Dielectrics
dc.source.conferencedate5/04/1999
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 567


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