A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs

Abstract

A straightforward and fast (similar to 200 mu s) DCIV technique, which is completely compatible with the commercial semiconductor analyzer, is demonstrated to measure the time kinetics of interface trap generation (Delta N-IT) during and after DC/AC NBTI stress in Si p-FinFETs. The measurement time of each VG step in a staircase IV waveform can be down to 2 mu s. It is found that the repassivation of Delta N-IT after DC stress is a very fast process and happens within 200 mu s recovery time. The delayed recovery phenomenon of Delta N-IT is observed only for Mode-B AC stress and high frequency (f) Mode-A AC stress, resulting in the /dependent Delta N-IT under Mode-A AC stress and f-independent Delta N-IT under Mode-B AC stress.