dc.contributor.author | Hsu, Po-Chun | |
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Liang, Hu | |
dc.contributor.author | De Jaeger, Brice | |
dc.contributor.author | Bakeroot, Benoit | |
dc.contributor.author | Wellekens, Dirk | |
dc.contributor.author | Decoutere, Stefaan | |
dc.date.accessioned | 2022-03-03T14:27:49Z | |
dc.date.available | 2021-11-02T15:58:48Z | |
dc.date.available | 2022-03-03T14:27:49Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 1862-6300 | |
dc.identifier.other | WOS:000679123300001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/37715.2 | |
dc.source | WOS | |
dc.title | Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy | |
dc.type | Journal article | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.imecauthor | Liang, Hu | |
dc.contributor.imecauthor | De Jaeger, Brice | |
dc.contributor.imecauthor | Bakeroot, Benoit | |
dc.contributor.imecauthor | Wellekens, Dirk | |
dc.contributor.imecauthor | Decoutere, Stefaan | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.contributor.orcidimec | De Jaeger, Brice::0000-0001-8804-7556 | |
dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
dc.identifier.doi | 10.1002/pssa.202100227 | |
dc.source.numberofpages | 8 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 2100227 | |
dc.source.journal | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | |
dc.source.issue | 23 | |
dc.source.volume | 218 | |
imec.availability | Published - imec | |