Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy

Publication:

2021

Journal article

Author(s)

;

;

;

;

;

;

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

1775 since deposited on 2021-11-02

Acq. date: 2025-12-16