Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy

Publication:

2021

Journal article

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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

1777 since deposited on 2021-11-02

2last month

1last week

Acq. date: 2026-10-04