Publication:

Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy

Date

2021
Journal article
https://doi.org/10.1002/pssa.202100227
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dc.contributor.authorHsu, Po-Chun
dc.contributor.authorSimoen, Eddy
dc.contributor.authorLiang, Hu
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorWellekens, Dirk
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2022-03-03T14:27:49Z
dc.date.available2021-11-02T15:58:48Z
dc.date.available2022-03-03T14:27:49Z
dc.date.issued2021
dc.identifier.doi10.1002/pssa.202100227
dc.identifier.issn1862-6300
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37715
dc.publisherWILEY-V C H VERLAG GMBH
dc.source.beginpage2100227
dc.source.issue23
dc.source.journalPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
dc.source.numberofpages8
dc.source.volume218
dc.subject.keywordsALGAN/GAN
dc.subject.keywordsTRAPS
dc.subject.keywordsHEMT
dc.title

Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy

dc.typeJournal article
dspace.entity.typePublication
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