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Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy
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Authors
Hsu, Po-Chun
;
Simoen, Eddy
;
Liang, Hu
;
De Jaeger, Brice
;
Bakeroot, Benoit
;
Wellekens, Dirk
;
Decoutere, Stefaan
DOI
10.1002/pssa.202100227
ISSN
1862-6300
Issue
23
Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume
218
Title
Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy
Publication type
Journal article
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20.500.12860/37715.2
*
2022-03-03T14:25:06Z
validation by library/open access desk
1
20.500.12860/37715
2021-11-02T15:58:48Z
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