Browsing by author "De Jaeger, Brice"

200 mm Germanium-on-insulator(GeOI) by smart cut technology and recent GeOI MOSFETs achievements

Akatsu, T.; Deguet, C.; Sanchez, L.; Richtarch, C.; Allibert, F.; Letertre, F.; Mazure, C.; Kernevez, N.; Clavelier, L.; Le Royer, C.; Hartmann, J.M.; Loup, V.; Meuris, Marc; De Jaeger, Brice; Raskin, G. (2005)

200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

Cosnier, Thibault; Syshchyk, Olga; De Jaeger, Brice; Geens, Karen; Cingu, Deepthi; Fabris, Elena; Borga, Matteo; Vohra, Anurag; Zhao, Ming; Bakeroot, Benoit; Wellekens, Dirk; Magnani, Alessandro; Vudumula, Pavan; Chatterjee, Urmimala; Langer, Robert; Decoutere, Stefaan (2021)

A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

Trojman, Lionel; Acurio, Eliana; De Jaeger, Brice; Posthuma, Niels; Decoutere, Stefaan; Bakeroot, Benoit (2023)

A low thermal budget pre metal dielectric stack using PECVD and HDP processing

Schaekers, Marc; De Jaeger, Brice; Sleeckx, Erik; Debusschere, Ingrid; Van Hove, Marleen; Lauwers, A.; Hauf, H. (2001)

A step towards a better understanding of silicon passivated (100) Ge p-channel

Pourtois, Geoffrey; Houssa, Michel; De Jaeger, Brice; Leys, Frederik; Kaczer, Ben; Martens, Koen; Caymax, Matty; Meuris, Marc; Groeseneken, Guido; Heyns, Marc (2007)

Advanced transistors for high frequency applications

Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Walke, Amey; Ingels, Mark; Yu, Hao; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Yadav, Sachin; ElKashlan, Rana Y.; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Simoen, Eddy; Zhao, Ming; zhao, ellen; De Jaeger, Brice; Fleetwood, D.M.; Langer, Robert; Wambacq, Piet; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2020)

AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility

Cheng, Kai; Liang, Hu; Van Hove, Marleen; Geens, Karen; De Jaeger, Brice; Srivastava, Puneet; Kang, Xuanwu; Favia, Paola; Bender, Hugo; Decoutere, Stefaan; Dekoster, Johan; del Agua Borniquel, Jose Ignacio; Jun, Sung Won; Chung, Hua (2012)

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Wellekens, Dirk; Liang, Hu; Zhao, Ming; De Jaeger, Brice; Geens, Karen; Ronchi, Nicolo; Decoutere, Stefaan; Moens, Peter; Banerjee, Abhishek; Ziad, Hocine; Tack, Marnix (2018)

Analysis of junction leakage in advanced germanium p+/n junctions

Eneman, Geert; Sicart i Casain, Oriol; Simoen, Eddy; Brunco, David; De Jaeger, Brice; Satta, Alessandra; Nicholas, Gareth; Claeys, Cor; Meuris, Marc; Heyns, Marc (2007)

Analysis of the temperature dependence of trap-assisted tunneling in Ge pFET junctions

Bargallo Gonzalez, Mireia; Eneman, Geert; Wang, Gang; De Jaeger, Brice; Simoen, Eddy; Claeys, Cor (2011)

Analysis of the temperature dependence of trap-assisted-tunneling in Ge pFETs junctions

Bargallo Gonzalez, Mireia; Eneman, Geert; Wang, Gang; De Jaeger, Brice; Simoen, Eddy; Claeys, Cor (2011)

Applicability of charge pumping on Germanium MOSFETs

Martens, Koen; Kaczer, Ben; Grasser, Tibor; De Jaeger, Brice; Meuris, Marc; Maes, Herman; Groeseneken, Guido (2008)

Atomic layer deposition as an enabling technology for fabrication of germanium MOS transistor

Eneman, Geert; Delabie, Annelies; Van Elshocht, Sven; De Jaeger, Brice; Nicholas, Gareth; Martens, Koen; Brunco, David; Zimmerman, Paul; Houssa, Michel; Pourtois, Geoffrey; Kaczer, Ben; Leys, Frederik; Winderickx, Gillis; Huyghebaert, Cedric; Terzieva, Valentina; Loo, Roger; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007)