Browsing by author "De Jaeger, Brice"
Now showing items 21-40 of 177
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Charge pumping characterization of germanium MOSFETs
Martens, Koen; Kaczer, Ben; De Jaeger, Brice; Meuris, Marc; Maes, Herman; Groeseneken, Guido (2007) -
CMOS-compatible GaN-based devices on 200mm-Si for RF applications: integration and performance
Peralagu, Uthayasankaran; Alian, AliReza; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Chang, Shane; Simoen, Eddy; Zhao, Simeng Ellen; De Jaeger, Brice; Fleetwood, Daniel M.; Wambacq, Piet; Zhao, Ming; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2019-12) -
Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer
Ronchi, Nicolo; De Jaeger, Brice; Van Hove, Marleen; Roelofs, Robin; Wu, Tian-Li; Hu, Jie; Kang, Xuanwu; Decoutere, Stefaan (2014) -
Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN
Ronchi, Nicolo; De Jaeger, Brice; Van Hove, Marleen; Roelofs, Robin; Wu, Tian-Li; Hu, Jie; Kang, Xuanwu; Decoutere, Stefaan (2015) -
Comparison of AlGaN/GaN MISHEMT powerbar designs
Stoffels, Steve; Ronchi, Nicolo; Venegas, Rafael; De Jaeger, Brice; Marcon, Denis; Decoutere, Stefaan (2013-08) -
Comparison of AlGaN/GaN MISHEMT powerbar designs
Stoffels, Steve; Ronchi, Nicolo; Venegas, Rafael; De Jaeger, Brice; Marcon, Denis; Decoutere, Stefaan (2014-02) -
Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation
Martens, Koen; Rooyackers, Rita; Firrincieli, Andrea; Vincent, Benjamin; Loo, Roger; De Jaeger, Brice; Meuris, Marc; Favia, Paola; Bender, Hugo; Douhard, Bastien; Vandervorst, Wilfried; Simoen, Eddy; Jurczak, Gosia; Wouters, Dirk; Kittl, Jorge (2011) -
Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
Wu, Tian-Li; Marcon, Denis; Bakeroot, Benoit; De Jaeger, Brice; Lin, Dennis; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Defect assessment and leakage control in Ge junctions
Gonzalez, M.B.; Simoen, Eddy; Eneman, Geert; De Jaeger, Brice; Wang, G.; Loo, Roger; Claeys, Cor (2014) -
Defect assessment and leakage control in Ge pFET junctions
Bargallo Gonzalez, Mireia; Simoen, Eddy; Eneman, Geert; De Jaeger, Brice; Wang, Gang; Loo, Roger; Claeys, Cor (2013-09) -
Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy
Hsu, Po-Chun; Simoen, Eddy; Liang, Hu; De Jaeger, Brice; Bakeroot, Benoit; Wellekens, Dirk; Decoutere, Stefaan (2021) -
Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs
Simoen, Eddy; Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, A.; Myronov, M.; Leadley, D.R.; Meuris, Marc; Hoffmann, Thomas Y.; Claeys, Cor (2011) -
Defects and electrical performance of germanium PMOS devices
Eneman, Geert; Simoen, Eddy; Yang, Rui; De Jaeger, Brice; Wang, Gang; Mitard, Jerome; Hellings, Geert; Brunco, David; Loo, Roger; De Meyer, Kristin; Claeys, Cor; Meuris, Marc; Heyns, Marc (2009) -
Defects, junction leakage and electrical performance of Ge pFET devices
Eneman, Geert; Simoen, Eddy; Yang, Rui; De Jaeger, Brice; Wang, Gang; Mitard, Jerome; Hellings, Geert; Brunco, David; Loo, Roger; De Meyer, Kristin; Caymax, Matty; Claeys, Cor; Meuris, Marc; Heyns, Marc (2009) -
Deposition of HfO2 on germanium and the impact of surface pretreatments
Van Elshocht, Sven; Brijs, Bert; Caymax, Matty; Conard, Thierry; Chiarella, Thomas; De Gendt, Stefan; De Jaeger, Brice; Kubicek, Stefan; Meuris, Marc; Onsia, Bart; Richard, Olivier; Teerlinck, Ivo; Van Steenbergen, Jan; Zhao, Chao; Heyns, Marc (2004) -
Development of AlGaN recess etch for Emode POWER HEMTs
Mannaert, Geert; Paraschiv, Vasile; De Jaeger, Brice; Van Hove, Marleen; Demand, Marc; Decoutere, Stefaan; Boullart, Werner (2012) -
Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers
Simoen, Eddy; Brouwers, Gijs; Eneman, Geert; Bargallo Gonzalez, Mireia; De Jaeger, Brice; Mitard, Jerome; Brunco, David; Souriau, Laurent; Cody, N.; Thomas, S.; Meuris, Marc (2008) -
Device breakdown optimization of Al2O3/GaN E-mode MISFETs
Kang, Xuanwu; Wellekens, Dirk; Van Hove, Marleen; De Jaeger, Brice; Ronchi, Nicolo; Wu, Tian-Li; You, Shuzhen; Bakeroot, Benoit; Hu, Jie; Marcon, Denis; Stoffels, Steve; Decoutere, Stefaan (2016) -
Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium
Satta, Alessandra; Simoen, Eddy; Clarysse, Trudo; Janssens, Tom; Benedetti, Alessandro; De Jaeger, Brice; Meuris, Marc; Vandervorst, Wilfried (2005) -
Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
Marcon, Denis; Van Hove, Marleen; De Jaeger, Brice; Posthuma, Niels; Wellekens, Dirk; You, Shuzhen; Kang, Xuanwu; Wu, Tian-Li; Willems, Maarten; Stoffels, Steve; Decoutere, Stefaan (2015)