Browsing by author "Liang, Hu"
Now showing items 1-20 of 55
-
AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility
Cheng, Kai; Liang, Hu; Van Hove, Marleen; Geens, Karen; De Jaeger, Brice; Srivastava, Puneet; Kang, Xuanwu; Favia, Paola; Bender, Hugo; Decoutere, Stefaan; Dekoster, Johan; del Agua Borniquel, Jose Ignacio; Jun, Sung Won; Chung, Hua (2012) -
AlN/AlGaN/GaN wafer optimization on silicon (111): bow and crystal quality control for Si-CMOS fabs
Kandaswamy, Prem Kumar; Liang, Hu; Zhao, Ming; Saripalli, Yoga; Porter Carlson, Eric; Thapa, Sarad Bahadur; Van Hove, Marleen; Richard, Olivier; De Vos, Brecht; Vancoille, Eric; Dutta, Barundeb (2014) -
An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Wellekens, Dirk; Liang, Hu; Zhao, Ming; De Jaeger, Brice; Geens, Karen; Ronchi, Nicolo; Decoutere, Stefaan; Moens, Peter; Banerjee, Abhishek; Ziad, Hocine; Tack, Marnix (2018) -
Analysis of point defect distributions in AlGaN/GaN heterostructures via spectroscopic photo current-voltage measurements
Ozden, Burcu; Khanal, Min P; Youn, Suhyeon; Mirkhani, Vahid; Yapabandara, Kosala; Park, Minseo; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Saripalli, Yoga (2016) -
Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures
Wu, Tian-Li; Bakeroot, Benoit; Liang, Hu; Posthuma, Niels; You, Shuzhen; Ronchi, Nicolo; Stoffels, Steve; Marcon, Denis; Decoutere, Stefaan (2017) -
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; De Santi, Carlo; Stoffels, Steve; You, Shuzhen; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures
Kandaswamy, Prem Kumar; Saripalli, Yoga; Van Hove, Marleen; You, Shuzhen; Zhao, Ming; Liang, Hu; Vanhaeren, Danielle; Vanderheyden, Annelies; Schulze, Andreas; Eyben, Pierre; Decoutere, Stefaan; Langer, Robert; Vandervorst, Wilfried (2014) -
Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates
De Jaeger, Brice; Van Hove, Marleen; Wellekens, Dirk; Kang, Xuanwu; Liang, Hu; Mannaert, Geert; Geens, Karen; Decoutere, Stefaan (2012) -
Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using Deep-Level Transient Fourier Spectroscopy
Lechaux, Yoann; Minj, Albert; Mechin, Laurence; Liang, Hu; Geens, Karen; Zhao, Ming; Simoen, Eddy; Guillet, Bruno (2020) -
Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques
Minj, Albert; Geens, Karen; Liang, Hu; Han, Han; Noel, Celine; Bakeroot, Benoit; Paredis, Kristof; Zhao, Ming; Hantschel, Thomas; Decoutere, Stefaan (2023) -
Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy
Hsu, Po-Chun; Simoen, Eddy; Liang, Hu; De Jaeger, Brice; Bakeroot, Benoit; Wellekens, Dirk; Decoutere, Stefaan (2021) -
Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
Geens, Karen; Herwig, Hahn; Liang, Hu; Borga, Matteo; Cingu, Deepthi; You, Shuzhen; Marx, Matthias; Oligschlaeger, Robert; Fahle, Dirk; Heuken, Michael; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Decoutere, Stefaan (2021) -
Design and optical characterization of novel InGaN/GaN multiple quantum well structures by metal organic vapor phase epitaxy
Zhang, Liyang; Lieten, Ruben; Latkowska, M.; Baranowski, M.; Kudrawiec, R.; Cheng, K.; Liang, Hu; Borghs, Gustaaf (2013) -
Design and optical characterization of novel InGaN/GaN multiple quantum wells structures by metal organic vapor phase epitaxy
Zhang, Liyang; Cheng, Kai; Liang, Hu; Lieten, Ruben; Latkowska, Magdalena; Baranowski, Michal; Kudrawiec, Robert; Misiewicz, Jan; Dekoster, Johan; Borghs, Gustaaf (2012) -
Development of a GaN epi-stack on 200mm Si (111) for semi-vertical power devices
Liang, Hu; Stoffels, Steve; Geens, Karen; Decoutere, Stefaan (2017) -
Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates
You, Shuzhen; Posthuma, Niels; Ronchi, Nicolo; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Liang, Hu; Zhao, Ming; Decoutere, Stefaan (2018) -
Dispersion free high voltage III-N buffer development on 200 mm silicon for power electronics
Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Novak, Tomas; Van Hove, Marleen; Stoffels, Steve; De Jaeger, Brice; Posthuma, Niels; Marcon, Denis; Decoutere, Stefaan; Langer, Robert (2015) -
DLTS Study of Electrically Active Defects in semi-vertical GaN-on-Si FETs
Drobnŭ, Jakub; Marek, Juraj; Koza, A.; Vadovski, J.; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2020) -
Electrical and DLTS Characterization of Gate Interfaces in GaN-based Trench-gate semi-vertical MOS devices
Marek, Juraj; Mikoláek, Miroslav; Drobnŭ, Jakub; Kozarik, Jozef; Chvála, Ale; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2020) -
Enhancement-mode p-GaN-HEMT Epitaxy Technology on 200 mm Si Substrates
Liang, Hu; Posthuma, Niels; Stoffels, Steve; Zhao, Ming; Decoutere, Stefaan (2019)