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High-speed switching of double-barrier resonant-tunneling light-emitting diodes investigated by picosecond electroluminescence measurements

dc.contributor.authorRomandic, Igor
dc.contributor.authorZurauskiene, N.
dc.contributor.authorGoovaerts, E.
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-14T11:35:41Z
dc.date.available2021-10-14T11:35:41Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3778
dc.sourceIIOimport
dc.titleHigh-speed switching of double-barrier resonant-tunneling light-emitting diodes investigated by picosecond electroluminescence measurements
dc.typeProceedings paper
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage29
dc.source.endpage32
dc.source.conferenceUltrafast Phenomena in Semiconductors; Proceedings of the 10th Int. Symp. on Ultrafast Phenomena in Semiconductors; August-Sept.
dc.source.conferencelocation
imec.availabilityPublished - imec


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