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Random telegraph signals as a diagnostic tool to study single defects in submicron silicon MOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorLukyanchikova, N. B.
dc.contributor.authorPetrichuk, M. V.
dc.contributor.authorGarbar, N. P.
dc.date.accessioned2021-10-14T11:39:09Z
dc.date.available2021-10-14T11:39:09Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3828
dc.sourceIIOimport
dc.titleRandom telegraph signals as a diagnostic tool to study single defects in submicron silicon MOSFETs
dc.typeMeeting abstract
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageCM24
dc.source.conferenceBNV- SBP. General Scientific Meeting. Program Overview, Plenary Invited Lectures, Oral and Poster Communications
dc.source.conferencedate20/05/1999
dc.source.conferencelocationBrussel Belgium
imec.availabilityPublished - open access


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