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Proton radiation hardness of MOS transistors at cryogenic temperature

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMohammadzadeh, A.
dc.date.accessioned2021-10-14T11:39:18Z
dc.date.available2021-10-14T11:39:18Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3830
dc.sourceIIOimport
dc.titleProton radiation hardness of MOS transistors at cryogenic temperature
dc.typeMeeting abstract
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageCM25
dc.source.conferenceBNV- SBP. General Scientific Meeting. Program Overview, Plenary Invited Lectures, Oral and Poster communications
dc.source.conferencedate20/05/1999
dc.source.conferencelocationBrussel Belgium
imec.availabilityPublished - open access


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