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Laser reflectance monitoring of GaN MOCVD growth

dc.contributor.authorStafford, A.
dc.contributor.authorIrvine, S. J. C.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorThrush, E.
dc.contributor.authorConsidine, L.
dc.contributor.authorCrawley, J.
dc.date.accessioned2021-10-14T11:40:34Z
dc.date.available2021-10-14T11:40:34Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3847
dc.sourceIIOimport
dc.titleLaser reflectance monitoring of GaN MOCVD growth
dc.typeOral presentation
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.conference1st UK Nitrides Consortium Conference; 24 September 1999; Glasgow, Scotland.
dc.source.conferencelocation
imec.availabilityPublished - imec


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