Show simple item record

Atomic-Scale Investigations on the Wet Etching of Group IV Semiconductors in Acidic H2O2 Solution: The Case Ge Versus Si-Ge

dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorAbrenica, Graniel
dc.contributor.authorMayer, T.
dc.contributor.authorArnauts, Sophia
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2022-05-10T09:20:25Z
dc.date.available2021-11-30T16:46:57Z
dc.date.available2022-05-10T09:20:25Z
dc.date.issued2021-05
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38502.2
dc.titleAtomic-Scale Investigations on the Wet Etching of Group IV Semiconductors in Acidic H2O2 Solution: The Case Ge Versus Si-Ge
dc.typeMeeting abstract
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorAbrenica, Graniel
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecAltamirano Sanchez, Efrain::0000-0003-3235-6055
dc.date.embargo2021-05-30
dc.source.numberofpages1
dc.source.peerreviewno
dc.subject.disciplineMaterials science
dc.source.conferenceThe Electrochemical Society
dc.source.conferencedateMay 30 2021
dc.source.conferencelocationOnline
dc.source.journalECS Electrochemical society
imec.availabilityPublished - open access
imec.internalnotesMA2021-01 1029 (provided by author)


Files in this item

Thumbnail
Name:
2021 - ECS Chicago.pdf
Size:
112.6Kb
Format:
Unknown
Description:
Published version
View/open

This item appears in the following collection(s)

Show simple item record

Version history

VersionItemDateSummary
220.500.12860/38502.2*2022-05-10T09:17:13Zvalidation by library/open access desk
120.500.12860/385022021-11-30T16:46:57Z

*Selected version