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Selective Si Etchant for Gate-All-Around Transistors with Si1-xGex Channel

dc.contributor.authorHarada, Ken
dc.contributor.authorSuzuki, Tatsunobu
dc.contributor.authorAsano, Mari
dc.contributor.authorKakeshita, Kan
dc.contributor.authorPuttarame Gowda, Pallavi
dc.contributor.authorOniki, Yusuke
dc.contributor.authorAltamirano Sanchez, Efrain
dc.date.accessioned2022-02-10T13:15:16Z
dc.date.available2021-12-01T15:58:48Z
dc.date.available2022-02-10T13:15:16Z
dc.date.issued2021
dc.identifier.issnn/a
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38514.2
dc.titleSelective Si Etchant for Gate-All-Around Transistors with Si1-xGex Channel
dc.typeMeeting abstract
dc.contributor.imecauthorPuttarame Gowda, Pallavi
dc.contributor.imecauthorOniki, Yusuke
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.orcidimecOniki, Yusuke::0000-0002-6619-1327
dc.source.numberofpages1
dc.source.peerreviewno
dc.source.conferenceSurface Preparation and Cleaning Conference (SPCC)
dc.source.conferencedate2021
dc.source.conferencelocationVirtual
dc.source.journaln/a
imec.availabilityPublished - imec


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220.500.12860/38514.2*2022-02-10T13:14:35Zvalidation by library/open access desk
120.500.12860/385142021-12-01T15:58:48Z

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