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Silicide induced pattern density and orientation dependent transconductance in MOS transistors

dc.contributor.authorSteegen, An
dc.contributor.authorStucchi, Michele
dc.contributor.authorLauwers, A.
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-14T11:41:01Z
dc.date.available2021-10-14T11:41:01Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3853
dc.sourceIIOimport
dc.titleSilicide induced pattern density and orientation dependent transconductance in MOS transistors
dc.typeProceedings paper
dc.contributor.imecauthorStucchi, Michele
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpage497
dc.source.endpage500
dc.source.conferenceInternational Electron Devices Meeting. Technical digest; 5-8 Dec. 1999; Washington, D.C., USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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