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dc.contributor.authorLin, Dennis
dc.contributor.authorWu, Xiangyu
dc.contributor.authorCott, Daire
dc.contributor.authorVerreck, Devin
dc.contributor.authorGroven, Benjamin
dc.contributor.authorSergeant, Stefanie
dc.contributor.authorSmets, Quentin
dc.contributor.authorSutar, Surajit
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorRadu, Iuliana
dc.date.accessioned2022-01-10T10:18:51Z
dc.date.available2021-12-06T02:06:17Z
dc.date.available2022-01-10T10:18:51Z
dc.date.issued2020
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000717011600164
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38541.2
dc.sourceWOS
dc.titleDual gate synthetic WS2 MOSFETs with 120 mu S/mu m Gm 2.7 mu F/cm(2) capacitance and ambipolar channel
dc.typeProceedings paper
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorWu, Xiangyu
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorSergeant, Stephanie
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorSutar, Surajit
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorSergeant, Stefanie
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecSergeant, Stefanie::0000-0001-9923-0903
dc.identifier.doi10.1109/IEDM13553.2020.9372055
dc.identifier.eisbn978-1-7281-8888-1
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 12-18, 2020
dc.source.conferencelocationSan Francisco, CA, USA
dc.source.journalna
imec.availabilityPublished - imec


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