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Time-dependent degradation law for reliable lifetime prediction in sub-0.25μm bulk silicon N-MOSFETs

dc.contributor.authorSzelag, B.
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorBalestra, F.
dc.date.accessioned2021-10-14T11:42:24Z
dc.date.available2021-10-14T11:42:24Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3871
dc.sourceIIOimport
dc.titleTime-dependent degradation law for reliable lifetime prediction in sub-0.25μm bulk silicon N-MOSFETs
dc.typeJournal article
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.source.peerreviewno
dc.source.beginpage1385
dc.source.endpage1386
dc.source.journalElectronics Letters
dc.source.issue16
dc.source.volume35
imec.availabilityPublished - imec


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