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Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates

dc.contributor.authorMagnani, Alessandro
dc.contributor.authorCosnier, Thibault
dc.contributor.authorAmirifar, Nooshin
dc.contributor.authorChatterjee, Urmimala
dc.contributor.authorZhao, Ming
dc.contributor.authorLi, Xiangdong
dc.contributor.authorGeens, Karen
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2022-02-21T09:22:31Z
dc.date.available2022-02-21T09:22:31Z
dc.date.issued2021
dc.identifier.issn0026-2714
dc.identifier.otherWOS:000635095600008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38920
dc.sourceWOS
dc.titleThermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates
dc.typeJournal article
dc.contributor.imecauthorMagnani, Alessandro
dc.contributor.imecauthorCosnier, Thibault
dc.contributor.imecauthorAmirifar, Nooshin
dc.contributor.imecauthorChatterjee, Urmimala
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecMagnani, Alessandro::0000-0001-6719-7467
dc.contributor.orcidimecCosnier, Thibault::0000-0001-7991-7222
dc.contributor.orcidimecChatterjee, Urmimala::0000-0002-8934-6774
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.identifier.doi10.1016/j.microrel.2021.114061
dc.source.numberofpages9
dc.source.peerreviewyes
dc.source.beginpage114061
dc.source.journalMICROELECTRONICS RELIABILITY
dc.source.issuena
dc.source.volume118
imec.availabilityPublished - imec


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