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New aspects of nanopotentiometry for MOSFET transistors

dc.contributor.authorTrenkler, Thomas
dc.contributor.authorStephenson, Robert
dc.contributor.authorJansen, Philippe
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHellemans, L.
dc.date.accessioned2021-10-14T11:44:15Z
dc.date.available2021-10-14T11:44:15Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3892
dc.sourceIIOimport
dc.titleNew aspects of nanopotentiometry for MOSFET transistors
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage188
dc.source.endpage198
dc.source.conferenceProceedings 5th International Workshop on the Measurement, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Se
dc.source.conferencedate28/03/1999
dc.source.conferencelocationResearch Triangle Park, NC USA
imec.availabilityPublished - open access


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