dc.contributor.author | You, Shuzhen | |
dc.contributor.author | Li, Xiangdong | |
dc.contributor.author | Geens, Karen | |
dc.contributor.author | Posthuma, Niels | |
dc.contributor.author | Zhao, Ming | |
dc.contributor.author | Liang, Hu | |
dc.contributor.author | Groeseneken, Guido | |
dc.contributor.author | Decoutere, Stefaan | |
dc.date.accessioned | 2022-02-25T13:30:45Z | |
dc.date.available | 2022-02-25T13:30:45Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 0268-1242 | |
dc.identifier.other | WOS:000612625300001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/39156 | |
dc.source | WOS | |
dc.title | GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect | |
dc.type | Journal article | |
dc.contributor.imecauthor | You, Shuzhen | |
dc.contributor.imecauthor | Li, Xiangdong | |
dc.contributor.imecauthor | Geens, Karen | |
dc.contributor.imecauthor | Posthuma, Niels | |
dc.contributor.imecauthor | Zhao, Ming | |
dc.contributor.imecauthor | Liang, Hu | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.imecauthor | Decoutere, Stefaan | |
dc.contributor.orcidimec | Geens, Karen::0000-0003-1815-3972 | |
dc.contributor.orcidimec | Posthuma, Niels::0000-0002-6029-1909 | |
dc.contributor.orcidimec | Zhao, Ming::0000-0002-0856-851X | |
dc.contributor.orcidimec | Groeseneken, Guido::0000-0003-3763-2098 | |
dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
dc.identifier.doi | 10.1088/1361-6641/abdbc1 | |
dc.source.numberofpages | 5 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 035008 | |
dc.source.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | |
dc.source.issue | 3 | |
dc.source.volume | 36 | |
imec.availability | Published - imec | |