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On the impact of indium and boron on the Reversed Narrow-Channel Effects (RNCE) in BULK and SOI MOSFETs

dc.contributor.authorvan Meer, Hans
dc.contributor.authorLyu, Jeong-ho
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-14T11:48:23Z
dc.date.available2021-10-14T11:48:23Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3938
dc.sourceIIOimport
dc.titleOn the impact of indium and boron on the Reversed Narrow-Channel Effects (RNCE) in BULK and SOI MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.source.peerreviewno
dc.source.beginpage31
dc.source.endpage34
dc.source.conference1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Tevhnical Papers; 8-10 June 1999; Tai
dc.source.conferencelocation
imec.availabilityPublished - imec


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