Multi-tier N=4 Binary Stacking, combining Face-to-Face and Back-to-Back Hybrid Wafer-to-Wafer Bonding Technology

Abstract

A binary wafer-to-wafer stacking scheme is advantageous over a sequential approach in terms of manufacturing cost and its impact on the stacked system yield. In this paper, such a binary wafer-to-wafer stacking flow is demonstrated. Two full thickness wafers are paired Face-to-Face using a 2 mu m pitch hybrid bonding technology, followed by top wafer thinning to 5 mu m. The Face-to-Face connections are fed through to the thinned top wafer surface by means of a 1 mu m diameter by 5 mu m deep via-last TSV. 2 mu m pitch hybrid backside pads are realized on top of these via-last TSVs, at the same time levelling out and planarizing the backside of the Face-to-Face bonded wafer pairs. Two N=2 Face-to-Face bonded wafer pairs are Back-to-Back hybrid bonded to each other, realizing an N=4 multi-tier wafer stack. The N4 top wafer is thinned to 5 mu m, revealing the nails of 5 mu m diameter by 8 mu m deep v ia-middle TSVs, implemented on this N4 wafer prior to the Face-to-Face bonding. An N4 backside passivation and an aluminum METPASS module finishes the multi-tier N=4 process flow. The paper describes the realization of the above explained integration flow. Several process challenges are extensively elaborated. Electrical results, featuring 100% yielding Back-to-Back kelvin and interwoven chains connections, demonstrate the maturity of this multi-tier N=4 binary stacking process.