Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology

Abstract

In this work, the performance and stability of integrated power Schottky Barrier Diodes (SBD) are reported. We demonstrate the fabrication method to integrate Gated Edge Termination (GET)-SBD into a p-GaN E-mode GaN power technology for 200V power switching applications. The 30mm wide integrated SBDs show a low forward voltage V-ac and can deliver more than 10A and 6A at Vac=3V for 25 degrees C and 150 degrees C, respectively. Furthermore, an on-resistance (R-on) increase of less than 20% up to 200V at 25 degrees C/150 degrees C can be obtained during pulsed IV characterization and OFF-state stress, indicating a promising stability of the integrated GET-SBDs on power p-GaN Gate High Electron Mobility Transistors (HEMTs) platform.