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TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs
dc.contributor.author | Vasilev, Alexander | |
dc.contributor.author | Jech, Markus | |
dc.contributor.author | Grill, Alexander | |
dc.contributor.author | Rzepa, Gerhard | |
dc.contributor.author | Schleich, Christian | |
dc.contributor.author | Tyaginov, Stanislav | |
dc.contributor.author | Makarov, Alexander | |
dc.contributor.author | Pobegen, Gregor | |
dc.contributor.author | Grasser, Tibor | |
dc.contributor.author | Waltl, Michael | |
dc.date.accessioned | 2022-05-30T09:34:34Z | |
dc.date.available | 2022-05-19T02:21:25Z | |
dc.date.available | 2022-05-30T09:34:34Z | |
dc.date.issued | 2022-04-19 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.other | WOS:000785740700001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/39843.2 | |
dc.source | WOS | |
dc.title | TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs | |
dc.type | Journal article | |
dc.contributor.imecauthor | Grill, Alexander | |
dc.contributor.imecauthor | Tyaginov, Stanislav | |
dc.contributor.orcidimec | Grill, Alexander::0000-0003-1615-1033 | |
dc.identifier.doi | 10.1109/TED.2022.3166123 | |
dc.source.numberofpages | 6 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 3290 | |
dc.source.endpage | 3295 | |
dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
dc.source.issue | 6 | |
dc.source.volume | 69 | |
imec.availability | Under review |