TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs

Vasilev, Alexander; Jech, Markus; Grill, Alexander; Rzepa, Gerhard; Schleich, Christian; Tyaginov, Stanislav; Makarov, Alexander; Pobegen, Gregor; Grasser, Tibor; Waltl, Michael

doi:10.1109/TED.2022.3166123

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TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs

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2022-04-19

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https://doi.org/10.1109/TED.2022.3166123

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IEEE TRANSACTIONS ON ELECTRON DEVICES

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185 since deposited on 2022-05-19

Acq. date: 2026-06-26

1659 since deposited on 2022-05-19

Acq. date: 2026-06-26

TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs

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