Publication:

TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs

Date

2022-04-19
Journal article
https://doi.org/10.1109/TED.2022.3166123
Simple item page Full metadata Statistics
Loading...
Thumbnail Image

Files

Published version 2.92 MB

Author(s)

Vasilev, Alexander
;
Jech, Markus
;
Grill, Alexander  
;
Rzepa, Gerhard
;
Schleich, Christian
;
Tyaginov, Stanislav  
;
Makarov, Alexander
;
Pobegen, Gregor
;
Grasser, Tibor
;
Waltl, Michael

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

Abstract

Description

Metrics

Downloads

116 since deposited on 2022-05-19
7last month
Acq. date: 2025-12-11

Views

1644 since deposited on 2022-05-19
2last month
Acq. date: 2025-12-11

Citations

Metrics

Downloads

116 since deposited on 2022-05-19
7last month
Acq. date: 2025-12-11

Views

1644 since deposited on 2022-05-19
2last month
Acq. date: 2025-12-11

Citations