Publication:

TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs

Date

2022
Journal article
https://doi.org/10.1109/ted.2022.3166123
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Author(s)

Vasilev, Alexander
;
Jech, Markus
;
Grill, Alexander  
;
Rzepa, Gerhard
;
Schleich, Christian
;
Tyaginov, Stanislav  
;
Makarov, Alexander
;
Pobegen, Gregor
;
Grasser, Tibor
;
Waltl, Michael

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

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247 since deposited on 2022-05-19
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1667 since deposited on 2022-05-19
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Acq. date: 2026-10-06

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