Publication:

TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs

Date

2022-04-19
Journal article
https://doi.org/10.1109/TED.2022.3166123
Simple item page Full metadata Statistics
 
dc.contributor.authorVasilev, Alexander
dc.contributor.authorJech, Markus
dc.contributor.authorGrill, Alexander
dc.contributor.authorRzepa, Gerhard
dc.contributor.authorSchleich, Christian
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorMakarov, Alexander
dc.contributor.authorPobegen, Gregor
dc.contributor.authorGrasser, Tibor
dc.contributor.authorWaltl, Michael
dc.contributor.imecauthorGrill, Alexander
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.contributor.orcidimecTyaginov, Stanislav::0000-0002-5348-2096
dc.date.accessioned2022-06-28T13:32:38Z
dc.date.available2022-05-19T02:21:25Z
dc.date.available2022-05-30T09:34:34Z
dc.date.available2022-06-28T13:32:38Z
dc.date.issued2022-04-19
dc.description.wosFundingTextThis work was supported in part by the Austrian Federal Ministry for Digital and Economic Affairs and the National Foundation for Research, Technology and Development, and Austrian Science Fund (FWF), under Project 31204-N30; and in part by the Open Access Funding Program, TU Wien Bibliothek.
dc.identifier.doi10.1109/TED.2022.3166123
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39843
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage3290
dc.source.endpage3295
dc.source.issue6
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages6
dc.source.volume69
dc.title

TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
TCAD_Modeling_of_Temperature_Activation_of_the_Hysteresis_Characteristics_of_Lateral_4H-SiC_MOSFETs.pdf
Size:
2.92 MB
Format:
Adobe Portable Document Format
Description:
Published version
Download
Publication available in collections:
Articles