Browsing Conference contributions by author "Kabir, Nafees"

Now showing items 1-2 of 2

First demonstration of strained Ge-in-STI IFQW pFETs featuring raised SiGe75% S/D, replacement metal gate and germanided local interconnects

Mitard, Jerome; Witters, Liesbeth; Vincent, Benjamin; Franco, Jacopo; Favia, Paola; Hikavyy, Andriy; Eneman, Geert; Loo, Roger; Brunco, David; Kabir, Nafees; Bender, Hugo; Sebaai, Farid; Vos, Rita; Mertens, Paul; Milenin, Alexey; Vecchio, Emma; Ragnarsson, Lars-Ake; Collaert, Nadine; Thean, Aaron (2013)
Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond

Eneman, Geert; Brunco, David; Witters, Liesbeth; Vincent, Benjamin; Favia, Paola; Hikavyy, Andriy; De Keersgieter, An; Mitard, Jerome; Loo, Roger; Veloso, Anabela; Richard, Olivier; Bender, Hugo; Lee, Seung Hun; Van Dal, Mark; Kabir, Nafees; Vandervorst, Wilfried; Caymax, Matty; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2012)