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Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg

dc.contributor.authorWu, Xiangyu
dc.contributor.authorCott, Daire
dc.contributor.authorLin, Zaoyang
dc.contributor.authorShi, Yuanyuan
dc.contributor.authorGroven, Benjamin
dc.contributor.authorMorin, Pierre
dc.contributor.authorVerreck, Devin
dc.contributor.authorSmets, Quentin
dc.contributor.authorMedina, Henry
dc.contributor.authorSutar, Surajit
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorRadu, Iuliana
dc.contributor.authorLin, Dennis
dc.date.accessioned2022-07-09T02:27:22Z
dc.date.available2022-07-09T02:27:22Z
dc.date.issued2021
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000812325400193
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40076
dc.sourceWOS
dc.titleDual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg
dc.typeProceedings paper
dc.contributor.imecauthorWu, Xiangyu
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorLin, Zaoyang
dc.contributor.imecauthorShi, Yuanyuan
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorMorin, Pierre
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorMedina, Henry
dc.contributor.imecauthorSutar, Surajit
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorLin, Dennis
dc.contributor.orcidimecShi, Yuanyuan::0000-0002-4836-6752
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecMorin, Pierre::0000-0002-4637-496X
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecSutar, Surajit::0000-0003-3114-718X
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.identifier.doi10.1109/IEDM19574.2021.9720695
dc.identifier.eisbn978-1-6654-2572-8
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 11-16, 2021
dc.source.conferencelocationSan Francisco
imec.availabilityUnder review


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220.500.12860/40076.22022-09-27T08:25:50Zvalidation by library/open access desk
120.500.12860/40076*2022-07-09T02:27:22Z

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