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Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10(3)s retention, > 10(11) cycles endurance and L-g scalability down to 14nm
dc.contributor.author | Belmonte, A. | |
dc.contributor.author | Oh, H. | |
dc.contributor.author | Subhechha, S. | |
dc.contributor.author | Rassoul, N. | |
dc.contributor.author | Hody, H. | |
dc.contributor.author | Dekkers, H. | |
dc.contributor.author | Delhougne, R. | |
dc.contributor.author | Ricotti, L. | |
dc.contributor.author | Banerjee, K. | |
dc.contributor.author | Chasin, A. | |
dc.contributor.author | van Setten, M. J. | |
dc.contributor.author | Puliyalil, H. | |
dc.contributor.author | Pak, M. | |
dc.contributor.author | Teugels, L. | |
dc.contributor.author | Tsvetanova, D. | |
dc.contributor.author | Vandersmissen, K. | |
dc.contributor.author | Kundu, S. | |
dc.contributor.author | Heijlen, J. | |
dc.contributor.author | Batuk, D. | |
dc.contributor.author | Geypen, J. | |
dc.contributor.author | Goux, L. | |
dc.contributor.author | Kar, G. S. | |
dc.date.accessioned | 2022-07-09T02:27:23Z | |
dc.date.available | 2022-07-09T02:27:23Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 2380-9248 | |
dc.identifier.other | WOS:000812325400098 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40079 | |
dc.source | WOS | |
dc.title | Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10(3)s retention, > 10(11) cycles endurance and L-g scalability down to 14nm | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Belmonte, A. | |
dc.contributor.imecauthor | Oh, H. | |
dc.contributor.imecauthor | Subhechha, S. | |
dc.contributor.imecauthor | Rassoul, N. | |
dc.contributor.imecauthor | Hody, H. | |
dc.contributor.imecauthor | Dekkers, H. | |
dc.contributor.imecauthor | Delhougne, R. | |
dc.contributor.imecauthor | Ricotti, L. | |
dc.contributor.imecauthor | Banerjee, K. | |
dc.contributor.imecauthor | Chasin, A. | |
dc.contributor.imecauthor | van Setten, M. J. | |
dc.contributor.imecauthor | Puliyalil, H. | |
dc.contributor.imecauthor | Pak, M. | |
dc.contributor.imecauthor | Teugels, L. | |
dc.contributor.imecauthor | Tsvetanova, D. | |
dc.contributor.imecauthor | Vandersmissen, K. | |
dc.contributor.imecauthor | Kundu, S. | |
dc.contributor.imecauthor | Heijlen, J. | |
dc.contributor.imecauthor | Batuk, D. | |
dc.contributor.imecauthor | Geypen, J. | |
dc.contributor.imecauthor | Goux, L. | |
dc.contributor.imecauthor | Kar, G. S. | |
dc.identifier.doi | 10.1109/IEDM19574.2021.9720596 | |
dc.identifier.eisbn | 978-1-6654-2572-8 | |
dc.source.numberofpages | 4 | |
dc.source.peerreview | yes | |
dc.source.conference | IEEE International Electron Devices Meeting (IEDM) | |
dc.source.conferencedate | DEC 11-16, 2021 | |
dc.source.conferencelocation | San Francisco | |
imec.availability | Under review |
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