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Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory

dc.contributor.authorRamesh, S.
dc.contributor.authorPalayam, S. Vadakupudhu
dc.contributor.authorAjaykumar, A.
dc.contributor.authorOpsomer, K.
dc.contributor.authorBastos, J.
dc.contributor.authorRagnarsson, L-A
dc.contributor.authorBreuil, L.
dc.contributor.authorArreghini, A.
dc.contributor.authorWouters, L.
dc.contributor.authorSpampinato, V
dc.contributor.authorFavia, P.
dc.contributor.authorMehta, A. Nalin
dc.contributor.authorCarolan, P.
dc.contributor.authorNyns, L.
dc.contributor.authorKatcko, K.
dc.contributor.authorStiers, J.
dc.contributor.authorVan den Bosch, G.
dc.contributor.authorRosmeulen, M.
dc.date.accessioned2022-07-09T02:27:24Z
dc.date.available2022-07-09T02:27:24Z
dc.date.issued2021
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000812325400074
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40081
dc.sourceWOS
dc.titleUnderstanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory
dc.typeProceedings paper
dc.contributor.imecauthorRamesh, S.
dc.contributor.imecauthorPalayam, S. Vadakupudhu
dc.contributor.imecauthorAjaykumar, A.
dc.contributor.imecauthorOpsomer, K.
dc.contributor.imecauthorBastos, J.
dc.contributor.imecauthorRagnarsson, L-A
dc.contributor.imecauthorBreuil, L.
dc.contributor.imecauthorArreghini, A.
dc.contributor.imecauthorWouters, L.
dc.contributor.imecauthorSpampinato, V
dc.contributor.imecauthorFavia, P.
dc.contributor.imecauthorMehta, A. Nalin
dc.contributor.imecauthorCarolan, P.
dc.contributor.imecauthorNyns, L.
dc.contributor.imecauthorKatcko, K.
dc.contributor.imecauthorStiers, J.
dc.contributor.imecauthorVan den Bosch, G.
dc.contributor.imecauthorRosmeulen, M.
dc.identifier.doi10.1109/IEDM19574.2021.9720571
dc.identifier.eisbn978-1-6654-2572-8
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 11-16, 2021
dc.source.conferencelocationSan Francisco
imec.availabilityUnder review


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220.500.12860/40081.22022-07-11T09:48:02Zvalidation by library/open access desk
120.500.12860/40081*2022-07-09T02:27:24Z

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