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dc.contributor.authorGuo, Jingrui
dc.contributor.authorHan, Kaizhen
dc.contributor.authorSubhechha, Subhali
dc.contributor.authorDuan, Xinlv
dc.contributor.authorChen, Qian
dc.contributor.authorGeng, Di
dc.contributor.authorHuang, Shijie
dc.contributor.authorXu, Lihua
dc.contributor.authorAn, Junjie
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorGong, Xiao
dc.contributor.authorWang, Lingfei
dc.contributor.authorLi, Ling
dc.contributor.authorLiu, Ming
dc.date.accessioned2022-07-09T02:28:14Z
dc.date.available2022-07-09T02:28:14Z
dc.date.issued2021
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000812325400198
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40102
dc.sourceWOS
dc.titleA New Surface Potential and Physics Based Compact Model for a-IGZO TFTs at Multinanoscale for High Retention and Low-Power DRAM Application
dc.typeProceedings paper
dc.contributor.imecauthorSubhechha, Subhali
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecSubhechha, Subhali::0000-0002-1960-5136
dc.identifier.doi10.1109/IEDM19574.2021.9720700
dc.identifier.eisbn978-1-6654-2572-8
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 11-16, 2021
dc.source.conferencelocationSan Francisco
imec.availabilityUnder review


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