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Large signal frequency dispersion effects in indium phosphide HEMTs

dc.contributor.authorWebster, D. R.
dc.contributor.authorvan der Zanden, Koen
dc.contributor.authorAtaei, G. R.
dc.contributor.authorMutabaratt, M.
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorhaigh, D. G.
dc.date.accessioned2021-10-14T11:57:05Z
dc.date.available2021-10-14T11:57:05Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4022
dc.sourceIIOimport
dc.titleLarge signal frequency dispersion effects in indium phosphide HEMTs
dc.typeProceedings paper
dc.contributor.imecauthorSchreurs, Dominique
dc.source.peerreviewno
dc.source.beginpage8
dc.source.endpage1/08/2010
dc.source.conferenceProceedings IEE Colloquium on Advances in Semiconductor Devices; 26 January 1999; London, UK.
dc.source.conferencelocation
imec.availabilityPublished - imec


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