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dc.contributor.authorCheng, Zhihui
dc.contributor.authorPang, Chin-Sheng
dc.contributor.authorWang, Peiqi
dc.contributor.authorLe, Son T.
dc.contributor.authorWu, Yanqing
dc.contributor.authorShahrjerdi, Davood
dc.contributor.authorRadu, Iuliana
dc.contributor.authorLemme, Max C.
dc.contributor.authorPeng, Lian-Mao
dc.contributor.authorDuan, Xiangfeng
dc.contributor.authorChen, Zhihong
dc.contributor.authorAppenzeller, Joerg
dc.contributor.authorKoester, Steven J.
dc.contributor.authorPop, Eric
dc.contributor.authorFranklin, Aaron D.
dc.contributor.authorRichter, Curt A.
dc.date.accessioned2023-01-03T11:04:51Z
dc.date.available2022-08-10T02:37:30Z
dc.date.available2023-01-03T11:04:51Z
dc.date.issued2022
dc.identifier.issn2520-1131
dc.identifier.otherWOS:000833024400002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40238.2
dc.sourceWOS
dc.titleHow to report and benchmark emerging field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.identifier.doi10.1038/s41928-022-00798-8
dc.source.numberofpages8
dc.source.peerreviewyes
dc.source.beginpage416
dc.source.endpage423
dc.source.journalNATURE ELECTRONICS
dc.source.issue7
dc.source.volume5
imec.availabilityPublished - imec
dc.description.wosFundingTextWe acknowledge H. Zhang and A. Davydov from the National Institute of Standards and Technology for their help with the TEM images of the oxide in Fig. 2. We acknowledge G. Li and L. Cao from North Carolina State University for providing the chemical-vapour-deposited MoS2 film. This work is supported by NEWLIMITS, a centre in nCORE, a Semiconductor Research Corporation (SRC) programme sponsored by NIST through award no. 70NANB17H041. A.D.F. acknowledges support from the National Science Foundation under grant no. ECCS 1915814. M.C.L. acknowledges funding from the European Union's Horizon 2020 research and innovation programme under grant agreements nos. 881603 (Graphene Flagship), 952792 (2D-EPL) and 829035 (QUEFORMAL), as well as the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) through grants nos. LE 2440/7-1 and LE 2440/8-1. Furthermore, support by the Bundesministerium fur Bildung und Forschung (BMBF, German Ministry of Education and Research) through grants nos. 03XP0210 (GIMMIK) and 03ZU1106 (NeuroSys) is acknowledged. L.-M.P. acknowledges the National Science Foundation of China under grant no. 61888102. S.J.K. acknowledges support from the NSF through award no. DMR-1921629. Fabrication and measurements were partially performed at the NIST Center for Nanoscale Science and Technology and at Duke Shared Manufacturing and Instrument Facility (SMIF). Certain commercial equipment, instruments, or materials are identified in this paper to specify the experimental procedure adequately. Such identifications are not intended to imply recommendation or endorsement by the National Institute of Standards and Technology (NIST), nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose.


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