| dc.contributor.author | Saurabh, Nishant | |
| dc.contributor.author | Patil, Shubham | |
| dc.contributor.author | Rawat, Amita | |
| dc.contributor.author | Chiarella, Thomas | |
| dc.contributor.author | Parvais, Bertrand | |
| dc.contributor.author | Ganguly, Udayan | |
| dc.date.accessioned | 2023-04-06T12:22:19Z | |
| dc.date.available | 2022-08-28T02:37:01Z | |
| dc.date.available | 2023-04-06T12:22:19Z | |
| dc.date.issued | 2022 | |
| dc.identifier.issn | 0741-3106 | |
| dc.identifier.other | WOS:000831160000008 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40314.2 | |
| dc.source | WOS | |
| dc.title | Investigation of Dielectric and Quantum Confinement Based Dopant Deactivation in the Extension Region of FinFET | |
| dc.type | Journal article | |
| dc.contributor.imecauthor | Chiarella, Thomas | |
| dc.contributor.imecauthor | Parvais, Bertrand | |
| dc.contributor.orcidimec | Chiarella, Thomas::0000-0002-6155-9030 | |
| dc.contributor.orcidimec | Parvais, Bertrand::0000-0003-0769-7069 | |
| dc.identifier.doi | 10.1109/LED.2022.3185025 | |
| dc.source.numberofpages | 4 | |
| dc.source.peerreview | yes | |
| dc.source.beginpage | 1171 | |
| dc.source.endpage | 1174 | |
| dc.source.journal | IEEE ELECTRON DEVICE LETTERS | |
| dc.source.issue | 8 | |
| dc.source.volume | 43 | |
| imec.availability | Published - imec | |
| dc.description.wosFundingText | This work was supported in part by the Department of Science and Technology (DST) Nano Mission, India; in part by the Ministry of Electronics and IT (MeitY) and Department of Electronics through the Nanoelectronics Network for Research and Applications (NNETRA) Project; in part by the Indian Institute of Technology (IIT) Bombay Nano-Fabrication (IITBNF) Facility, IIT Bombay; and in part by the Center for Excellence (CEN), IIT Bombay. The review of this letter was arranged by Editor K. J. Kuhn. | |
