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Elastic strain in In0.18Ga0.82N layer: a combined x-ray diffraction and Rutherford backscattering/channeling study

dc.contributor.authorWu, Ming Fang
dc.contributor.authorVantomme, Andre
dc.contributor.authorHogg, S. M.
dc.contributor.authorLangouche, G.
dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-14T11:58:49Z
dc.date.available2021-10-14T11:58:49Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4037
dc.sourceIIOimport
dc.titleElastic strain in In0.18Ga0.82N layer: a combined x-ray diffraction and Rutherford backscattering/channeling study
dc.typeJournal article
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.beginpage365
dc.source.endpage367
dc.source.journalAppl. Phys. Lett.
dc.source.issue3
dc.source.volume74
imec.availabilityPublished - imec


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