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Highly chemical reactive ion etching of gallium nitride

dc.contributor.authorKarouta, F.
dc.contributor.authorJacobs, B.
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorJacobs, Koen
dc.contributor.authorWeyher, J. L.
dc.contributor.authorNowak, G.
dc.contributor.authorCrane, R.
dc.contributor.authorHageman, P.
dc.date.accessioned2021-10-14T12:39:41Z
dc.date.available2021-10-14T12:39:41Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4056
dc.sourceIIOimport
dc.titleHighly chemical reactive ion etching of gallium nitride
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.beginpageW11.76
dc.source.journalMRS Internet Journal of Nitride Semiconductor Research
dc.source.volume5S1
dc.identifier.urlhttp://nsr.mij.mrs.org/5S1/W11.76/
imec.availabilityPublished - imec
imec.internalnotesPaper from: MRS Fall Meeting 1999


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