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High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction

dc.contributor.authorBreuil, Laurent
dc.contributor.authorNyns, Laura
dc.contributor.authorRachidi, Sana
dc.contributor.authorBanerjee, Kaustuv
dc.contributor.authorArreghini, Antonio
dc.contributor.authorBastos, Joao
dc.contributor.authorRamesh, Siva
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorRosmeulen, Maarten
dc.date.accessioned2023-01-03T10:55:09Z
dc.date.available2022-10-30T02:54:59Z
dc.date.available2023-01-03T10:55:09Z
dc.date.issued2022
dc.identifier.issn2330-7978
dc.identifier.otherWOS:000869001800037
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40642.2
dc.sourceWOS
dc.titleHigh-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction
dc.typeProceedings paper
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorRachidi, Sana
dc.contributor.imecauthorBanerjee, Kaustuv
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorBastos, Joao
dc.contributor.imecauthorRamesh, Siva
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecRachidi, Sana::0000-0001-8581-8597
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecBastos, Joao::0000-0002-8877-9850
dc.contributor.orcidimecRamesh, Siva::0000-0002-8473-7258
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.identifier.doi10.1109/IMW52921.2022.9779307
dc.identifier.eisbn978-1-6654-9947-7
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.beginpage144
dc.source.endpage147
dc.source.conference14th IEEE International Memory Workshop (IMW)
dc.source.conferencedateMAR 15-18, 2022
dc.source.conferencelocationDresden
dc.source.journalna
imec.availabilityPublished - imec
dc.description.wosFundingTextThis work has been funded by Imec's Industrial Affiliation Program on Storage Memory devices.


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220.500.12860/40642.2*2023-01-03T10:51:14Zvalidation by library/open access desk
120.500.12860/406422022-10-30T02:54:59Z

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