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Conference contributions
High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction
Publication:
High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction
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Date
2022
Proceedings Paper
https://doi.org/10.1109/IMW52921.2022.9779307
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Breuil, Laurent
;
Nyns, Laura
;
Rachidi, Sana
;
Banerjee, Kaustuv
;
Arreghini, Antonio
;
Bastos, Joao
;
Ramesh, Siva
;
Van den Bosch, Geert
;
Rosmeulen, Maarten
Journal
na
Abstract
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1490
since deposited on 2022-10-30
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1
last week
Acq. date: 2025-12-16
Citations
Metrics
Views
1490
since deposited on 2022-10-30
2
last month
1
last week
Acq. date: 2025-12-16
Citations