Publication:

High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction

Date

2022
Proceedings Paper
https://doi.org/10.1109/IMW52921.2022.9779307
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Author(s)

Breuil, Laurent  
;
Nyns, Laura  
;
Rachidi, Sana  
;
Banerjee, Kaustuv  
;
Arreghini, Antonio  
;
Bastos, Joao  
;
Ramesh, Siva  
;
Van den Bosch, Geert  
;
Rosmeulen, Maarten  

Journal

na

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1501 since deposited on 2022-10-30
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1501 since deposited on 2022-10-30
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Acq. date: 2026-06-03

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