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High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction

 
dc.contributor.authorBreuil, Laurent
dc.contributor.authorNyns, Laura
dc.contributor.authorRachidi, Sana
dc.contributor.authorBanerjee, Kaustuv
dc.contributor.authorArreghini, Antonio
dc.contributor.authorBastos, Joao
dc.contributor.authorRamesh, Siva
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorRosmeulen, Maarten
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorRachidi, Sana
dc.contributor.imecauthorBanerjee, Kaustuv
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorBastos, Joao
dc.contributor.imecauthorRamesh, Siva
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecRachidi, Sana::0000-0001-8581-8597
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecBastos, Joao::0000-0002-8877-9850
dc.contributor.orcidimecRamesh, Siva::0000-0002-8473-7258
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.date.accessioned2023-01-03T10:55:09Z
dc.date.available2022-10-30T02:54:59Z
dc.date.available2023-01-03T10:55:09Z
dc.date.issued2022
dc.description.wosFundingTextThis work has been funded by Imec's Industrial Affiliation Program on Storage Memory devices.
dc.identifier.doi10.1109/IMW52921.2022.9779307
dc.identifier.eisbn978-1-6654-9947-7
dc.identifier.issn2330-7978
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40642
dc.publisherIEEE
dc.source.beginpage144
dc.source.conference14th IEEE International Memory Workshop (IMW)
dc.source.conferencedateMAR 15-18, 2022
dc.source.conferencelocationDresden
dc.source.endpage147
dc.source.journalna
dc.source.numberofpages4
dc.title

High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction

dc.typeProceedings paper
dspace.entity.typePublication
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