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Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
dc.contributor.author | Favero, D. | |
dc.contributor.author | De Santi, C. | |
dc.contributor.author | Mukherjee, K. | |
dc.contributor.author | Borga, M. | |
dc.contributor.author | Geens, K. | |
dc.contributor.author | Chatterjee, U. | |
dc.contributor.author | Bakeroot, B. | |
dc.contributor.author | Decoutere, S. | |
dc.contributor.author | Rampazzo, F. | |
dc.contributor.author | Meneghesso, G. | |
dc.contributor.author | Zanoni, E. | |
dc.contributor.author | Meneghini, M. | |
dc.date.accessioned | 2023-01-09T03:12:32Z | |
dc.date.available | 2023-01-09T03:12:32Z | |
dc.date.issued | 2022-NOV | |
dc.identifier.issn | 0026-2714 | |
dc.identifier.other | WOS:000896860700011 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40950 | |
dc.source | WOS | |
dc.title | Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors | |
dc.type | Journal article | |
dc.contributor.imecauthor | Borga, M. | |
dc.contributor.imecauthor | Geens, K. | |
dc.contributor.imecauthor | Bakeroot, B. | |
dc.identifier.doi | 10.1016/j.microrel.2022.114620 | |
dc.source.numberofpages | 4 | |
dc.source.peerreview | yes | |
dc.source.journal | MICROELECTRONICS RELIABILITY | |
dc.source.volume | 138 | |
imec.availability | Under review |
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