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Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs
dc.contributor.author | Tang, Shun-Wei | |
dc.contributor.author | Bakeroot, Benoit | |
dc.contributor.author | Huang, Zhen-Hong | |
dc.contributor.author | Chen, Szu-Chia | |
dc.contributor.author | Lin, Wei-Syuan | |
dc.contributor.author | Lo, Ting-Chun | |
dc.contributor.author | Borga, Matteo | |
dc.contributor.author | Wellekens, Dirk | |
dc.contributor.author | Posthuma, Niels | |
dc.contributor.author | Decoutere, Stefaan | |
dc.contributor.author | Wu, Tian-Li | |
dc.date.accessioned | 2023-01-27T09:27:49Z | |
dc.date.available | 2023-01-25T03:19:38Z | |
dc.date.available | 2023-01-27T09:27:49Z | |
dc.date.issued | 2022-02 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.other | WOS:000910525500001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41025.2 | |
dc.source | WOS | |
dc.title | Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs | |
dc.type | Journal article | |
dc.type | Journal article (pre-print) | |
dc.contributor.imecauthor | Bakeroot, Benoit | |
dc.contributor.imecauthor | Borga, Matteo | |
dc.contributor.imecauthor | Wellekens, Dirk | |
dc.contributor.imecauthor | Posthuma, Niels | |
dc.contributor.imecauthor | Decoutere, Stefaan | |
dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
dc.contributor.orcidimec | Borga, Matteo::0000-0003-3087-6612 | |
dc.contributor.orcidimec | Posthuma, Niels::0000-0002-6029-1909 | |
dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
dc.identifier.doi | 10.1109/TED.2022.3231566 | |
dc.source.numberofpages | 5 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 449 | |
dc.source.endpage | 453 | |
dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
dc.source.issue | 2 | |
dc.source.volume | 70 | |
imec.availability | Under review |