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dc.contributor.authorTang, Shun-Wei
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorHuang, Zhen-Hong
dc.contributor.authorChen, Szu-Chia
dc.contributor.authorLin, Wei-Syuan
dc.contributor.authorLo, Ting-Chun
dc.contributor.authorBorga, Matteo
dc.contributor.authorWellekens, Dirk
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorWu, Tian-Li
dc.date.accessioned2023-01-25T03:19:38Z
dc.date.available2023-01-25T03:19:38Z
dc.date.issued2022-DEC 29
dc.identifier.issn0018-9383
dc.identifier.otherWOS:000910525500001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41025
dc.sourceWOS
dc.titleUsing Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs
dc.typeJournal article
dc.typeJournal article (pre-print)
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.identifier.doi10.1109/TED.2022.3231566
dc.source.numberofpages5
dc.source.peerreviewyes
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
imec.availabilityUnder review


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