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Some considerations on the growth of highly resistive GaN layers

dc.contributor.authorBougrioua, Zahia
dc.contributor.authorJacobs, Koen
dc.contributor.authorCheyns, Jan
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorThruch, E. J.
dc.contributor.authorWallis, R. H.
dc.contributor.authorDavies, R. A.
dc.date.accessioned2021-10-14T12:41:45Z
dc.date.available2021-10-14T12:41:45Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4141
dc.sourceIIOimport
dc.titleSome considerations on the growth of highly resistive GaN layers
dc.typeOral presentation
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.conferenceMRS Fall Meeting Symposium G: GaN and Related Alloys; November 26 - December 1, 2000; Boston, MA, USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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