dc.contributor.author | Ravsher, Taras | |
dc.contributor.author | Garbin, Daniele | |
dc.contributor.author | Fantini, Andrea | |
dc.contributor.author | Degraeve, Robin | |
dc.contributor.author | Clima, Sergiu | |
dc.contributor.author | Donadio, Gabriele Luca | |
dc.contributor.author | Kundu, Shreya | |
dc.contributor.author | Hody, Hubert | |
dc.contributor.author | Devulder, Wouter | |
dc.contributor.author | Van Houdt, Jan | |
dc.contributor.author | Afanas'ev, Valeri | |
dc.contributor.author | Delhougne, Romain | |
dc.contributor.author | Kar, Gouri Sankar | |
dc.date.accessioned | 2023-07-05T12:06:22Z | |
dc.date.available | 2023-04-09T03:53:07Z | |
dc.date.available | 2023-04-22T15:06:29Z | |
dc.date.available | 2023-07-05T12:06:22Z | |
dc.date.issued | 2023-05 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.other | WOS:000953395100001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41439.3 | |
dc.source | WOS | |
dc.title | Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch | |
dc.type | Journal article | |
dc.contributor.imecauthor | Ravsher, Taras | |
dc.contributor.imecauthor | Garbin, Daniele | |
dc.contributor.imecauthor | Fantini, Andrea | |
dc.contributor.imecauthor | Degraeve, Robin | |
dc.contributor.imecauthor | Clima, Sergiu | |
dc.contributor.imecauthor | Donadio, Gabriele Luca | |
dc.contributor.imecauthor | Kundu, Shreya | |
dc.contributor.imecauthor | Hody, Hubert | |
dc.contributor.imecauthor | Devulder, Wouter | |
dc.contributor.imecauthor | Van Houdt, Jan | |
dc.contributor.imecauthor | Delhougne, Romain | |
dc.contributor.imecauthor | Kar, Gouri Sankar | |
dc.contributor.orcidimec | Ravsher, Taras::0000-0001-7862-5973 | |
dc.contributor.orcidimec | Garbin, Daniele::0000-0002-5884-1043 | |
dc.contributor.orcidimec | Fantini, Andrea::0000-0002-3220-8856 | |
dc.contributor.orcidimec | Clima, Sergiu::0000-0002-4044-9975 | |
dc.contributor.orcidimec | Kundu, Shreya::0000-0001-8052-7774 | |
dc.contributor.orcidimec | Devulder, Wouter::0000-0002-5156-0177 | |
dc.contributor.orcidimec | Van Houdt, Jan::0000-0003-1381-6925 | |
dc.contributor.orcidimec | Hody, Hubert::0009-0000-1407-8755 | |
dc.date.embargo | 9999-12-31 | |
dc.identifier.doi | 10.1109/TED.2023.3252491 | |
dc.source.numberofpages | 6 | |
dc.source.peerreview | yes | |
dc.subject.discipline | Applied physics | |
dc.subject.discipline | Electrical & electronic engineering | |
dc.subject.discipline | Materials science | |
dc.source.beginpage | 2276 | |
dc.source.endpage | 2281 | |
dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
dc.source.issue | 5 | |
dc.source.volume | 70 | |
imec.availability | Published - open access | |
dc.description.wosFundingText | This work was supported in part by the imec Industrial Affiliation Program on Active Memory Devices and in part by the Research Foundation-Flanders (FWO) under Grant 1SD4721. | |