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Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch
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Authors
Ravsher, Taras
;
Garbin, Daniele
;
Fantini, Andrea
;
Degraeve, Robin
;
Clima, Sergiu
;
Donadio, Gabriele Luca
;
Kundu, Shreya
;
Hody, Hubert
;
Devulder, Wouter
;
Van Houdt, Jan
;
Afanas'ev, Valeri
;
Delhougne, Romain
;
Kar, Gouri Sankar
DOI
10.1109/TED.2023.3252491
ISSN
0018-9383
Issue
5
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume
70
Research discipline
Applied physics; Electrical & electronic engineering; Materials science
Title
Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch
Publication type
Journal article
Embargo date
9999-12-31
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Date
Summary
3
20.500.12860/41439.3
*
2023-07-05T12:01:58Z
validation by library/open access desk
2
20.500.12860/41439.2
2023-04-11T09:13:29Z
validation by imec author
1
20.500.12860/41439
2023-04-09T03:53:07Z
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