Browsing by author "Fantini, Andrea"
Now showing items 1-20 of 120
-
10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia (2011) -
1TFT-1RRAM cell on polymeric substrate as non-volatile memory element enabling future flexible electronic platforms
Lebanov, Ana; Fantini, Andrea; Degraeve, Robin; Nag, Manoj; Willegems, Myriam; Smout, Steve; Steudel, Soeren; Genoe, Jan; Heremans, Paul; Myny, Kris (2018) -
90nm W\Al2O3\TiW\Cu 1T1R CBRAM cell showing low-power, fast and disturb-free operation
Belmonte, Attilio; Kim, Woosik; Chan, BT; Heylen, Nancy; Fantini, Andrea; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2013) -
A cautionary note when looking for a truly reconfigurable resistive RAM PUF
Chuang, Kent; Degraeve, Robin; Fantini, Andrea; Groeseneken, Guido; Linten, Dimitri; Verbauwhede, Ingrid (2018) -
A combinatorial study of SiGeAsTe thin films for application as an Ovonic threshold switch selector
Devulder, Wouter; Garbin, Daniele; Clima, Sergiu; Donadio, Gabriele Luca; Fantini, Andrea; Govoreanu, Bogdan; Detavernier, Christophe; Chen, Larry; Miller, Michael; Goux, Ludovic; Van Elshocht, Sven; Swerts, Johan; Delhougne, Romain; Kar, Gouri Sankar (2022-07-01) -
A thermally stable and high-performance 90nm Al2O3\Cu-based 1T1R CBRAM cell
Belmonte, Attilio; Kim, Woosik; Chan, BT; Heylen, Nancy; Fantini, Andrea; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2013) -
Analysis of complementary RRAM switching
Wouters, Dirk; Zhang, Leqi; Fantini, Andrea; Degraeve, Robin; Goux, Ludovic; Chen, Yangyin; Govoreanu, Bogdan; Kar, Gouri Sankar; Groeseneken, Guido; Jurczak, Gosia (2012) -
Analysis of the excellent memory disturb characteristics of a hourglass-shaped filament in Al2O3/Cu-based CBRAM devices
Belmonte, Attilio; Celano, Umberto; Redolfi, Augusto; Fantini, Andrea; Muller, Robert; Vandervorst, Wilfried; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2015) -
Asymmetrical voltage driving for memory window improvement of flexible 1TFT-1RRAM cells for future Internet-Of-Things applications
Lebanov, Ana; Fantini, Andrea; Genoe, Jan; Heremans, Paul; Myny, Kris (2019-09) -
Asymmetry and switching phenomenology in TiN\(Al2O3)\HfO2\Hf systems
Goux, Ludovic; Fantini, Andrea; Govoreanu, Bogdan; Kar, Gouri Sankar; Clima, Sergiu; Chen, Yangyin; Degraeve, Robin; Wouters, Dirk; Pourtois, Geoffrey; Jurczak, Gosia (2012-08) -
Atomic disorder - intrinsic source of variability in RRAM materials
Clima, Sergiu; Degraeve, Robin; Fantini, Andrea; Goux, Ludovic; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2016) -
Atomic disorder as an intrinsic source of variability in filamentary RRAM devices – ab initio investigations
Clima, Sergiu; Fantini, Andrea; Goux, Ludovic; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2016) -
Balancing SET/RESET pulse for >1010 endurance in HfO2 / Hf 1T1R bipolar RRAM
Chen, Yangyin; Govoreanu, Bogdan; Goux, Ludovic; Degraeve, Robin; Fantini, Andrea; Kar, Gouri Sankar; Wouters, Dirk; Groeseneken, Guido; Kittl, Jorge; Jurczak, Gosia; Altimime, Laith (2012) -
Causes and consequences of the stochastic aspect of filamentary RRAM
Degraeve, Robin; Fantini, Andrea; Raghavan, Nagarajan; Goux, Ludovic; Clima, Sergiu; Govoreanu, Bogdan; Belmonte, Attilio; Linten, Dimitri; Jurczak, Gosia (2015) -
Composition optimization and device understanding of Si-Ge-As-Te ovonic threshold switch selector with excellent endurance
Garbin, Daniele; Devulder, Wouter; Degraeve, Robin; Donadio, Gabriele Luca; Clima, Sergiu; Opsomer, Karl; Fantini, Andrea; Cellier, Daniel; Kim, Wan Gee; Pakala, Mahendra; Cockburn, Andrew; Detavernier, Christophe; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2019) -
Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory
Ravsher, Taras; Degraeve, Robin; Garbin, Daniele; Clima, Sergiu; Fantini, Andrea; Donadio, Gabriele Luca; Kundu, Shreya; Devulder, Wouter; Hody, Hubert; Potoms, Goedele; Van Houdt, Jan; Afanasiev, Valeri; Belmonte, Attilio; Kar, Gouri Sankar (2024) -
Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector
Chai, Zheng; Zhang, Weidong; Clima, Sergiu; Hatem, Firas; Degraeve, Robin; Diao, Qihui; Zhang, Jian Fu; Freitas, Pedro; Marsland, John; Fantini, Andrea; Garbin, Daniele; Goux, Ludovic; Kar, Gouri Sankar (2021) -
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors
Ravsher, Taras; Fantini, Andrea; Vaisman Chasin, Adrian; Houshmand Sharifi, Shamin; Hody, Hubert; Dekkers, Harold; Witters, Thomas; Van Houdt, Jan; Afanas'ev, Valeri; Couet, Sebastien; Kar, Gouri Sankar (2022) -
Design exploration of IGZO diode based VCMA array design for Storage Class Memory Applications
Gupta, Mohit; Perumkunnil, Manu; Fantini, Andrea; Alinezhad Chamazcoti, Saeideh; Kim, Woojin; Garcia Bardon, Marie; Kar, Gouri Sankar; Furnemont, Arnaud (2022) -
Design Space Exploration of FeRAM Bit Cell for DRAM Application
Oh, Hyungrock; Xiang, Yang; Garcia Redondo, Fernando; Gupta, Mohit Kumar; Perumkunnil, Manu; Garcia Bardon, Marie; Dhiman, Amit; Nanjunde Gowda, Sathisha; Walke, Amey; Fantini, Andrea; Yasin, Farrukh; Kar, Gouri Sankar; Hellings, Geert; Dehaene, Wim (2024)